Skip to content
PICO Portalanswers from OpenAlex

Device performances and instabilities of the engineered active layer with different film thickness and composition ratios in amorphous InGaZnO thin film transistors

PaperCitations, authors & open-access status

Device performances and instabilities of the engineered active layer with different film thickness and composition ratios in amorphous InGaZnO thin film transistors is a paper indexed in PICO Portal from OpenAlex.

How many citations does Device performances and instabilities of the engineered active layer with different film thickness and composition ratios in amorphous InGaZnO thin film transistors have?

PICO Portalcitation count

Device performances and instabilities of the engineered active layer with different film thickness and composition ratios in amorphous InGaZnO thin film transistors has 4 citations in the OpenAlex counts PICO Portal stores.

When was Device performances and instabilities of the engineered active layer with different film thickness and composition ratios in amorphous InGaZnO thin film transistors published?

PICO Portalyear

Device performances and instabilities of the engineered active layer with different film thickness and composition ratios in amorphous InGaZnO thin film transistors has 2020 year in the PICO Portal index.

What is the open-access status of Device performances and instabilities of the engineered active layer with different film thickness and composition ratios in amorphous InGaZnO thin film transistors?

PICO Portaloa status

Device performances and instabilities of the engineered active layer with different film thickness and composition ratios in amorphous InGaZnO thin film transistors has gold oa status in the PICO Portal index.

What is the DOI of Device performances and instabilities of the engineered active layer with different film thickness and composition ratios in amorphous InGaZnO thin film transistors?

PICO Portaldoi

The DOI for Device performances and instabilities of the engineered active layer with different film thickness and composition ratios in amorphous InGaZnO thin film transistors is on the source record.

What is the OpenAlex record for Device performances and instabilities of the engineered active layer with different film thickness and composition ratios in amorphous InGaZnO thin film transistors?

PICO Portalopenalex

The OpenAlex for Device performances and instabilities of the engineered active layer with different film thickness and composition ratios in amorphous InGaZnO thin film transistors is on the source record.

Related on PICO Portal

470M+ articles · 14-day free trial