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Device performance limits and negative capacitance of monolayer GeSe and GeTe tunneling field effect transistors

PaperCitations, authors & open-access status

Device performance limits and negative capacitance of monolayer GeSe and GeTe tunneling field effect transistors is a paper indexed in PICO Portal from OpenAlex.

How many citations does Device performance limits and negative capacitance of monolayer GeSe and GeTe tunneling field effect transistors have?

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Device performance limits and negative capacitance of monolayer GeSe and GeTe tunneling field effect transistors has 29 citations in the OpenAlex counts PICO Portal stores.

When was Device performance limits and negative capacitance of monolayer GeSe and GeTe tunneling field effect transistors published?

PICO Portalyear

Device performance limits and negative capacitance of monolayer GeSe and GeTe tunneling field effect transistors has 2020 year in the PICO Portal index.

What is the open-access status of Device performance limits and negative capacitance of monolayer GeSe and GeTe tunneling field effect transistors?

PICO Portaloa status

Device performance limits and negative capacitance of monolayer GeSe and GeTe tunneling field effect transistors has gold oa status in the PICO Portal index.

What is the DOI of Device performance limits and negative capacitance of monolayer GeSe and GeTe tunneling field effect transistors?

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The DOI for Device performance limits and negative capacitance of monolayer GeSe and GeTe tunneling field effect transistors is on the source record.

What is the PMID of Device performance limits and negative capacitance of monolayer GeSe and GeTe tunneling field effect transistors?

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The PMID for Device performance limits and negative capacitance of monolayer GeSe and GeTe tunneling field effect transistors is on the source record.

What is the OpenAlex record for Device performance limits and negative capacitance of monolayer GeSe and GeTe tunneling field effect transistors?

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The OpenAlex for Device performance limits and negative capacitance of monolayer GeSe and GeTe tunneling field effect transistors is on the source record.

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